? 1991 mos field effect transistor 2sk1580 n-channel mos fet for switching document no. d13555ej4v0ds00 (4th edition) date published j une 2001 ns cp (k) printed in japan data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. the mark shows major revised points. package drawing (unit : mm) 1.25 0.1 2.1 0.1 d 0.3 +0.1 ?0.05 0.3 +0.1 ?0 g s 2.0 0.2 0.65 0.65 0.15 +0.1 ?0.05 0 to 0.1 0.3 0.9 0.1 marking description the 2sk1580 is an n -channel vertical type mos fet which can be driven by 2.5 v power supply. as the mos fet is driven by low voltage and does not require con- sideration of driving current, it is suitable for appliance including vcr cameras and headphone stereos which need power saving. features ? directly driven by ics having a 3 v power supply. ? not necessary to consider driving current because of its high input impedance. ? possible to reduce the number of parts by omittng the bias resistor. absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 16 v gate to source voltage (v ds = 0 v) v gss 16 v drain current (dc) (t c = 25c) i d(dc) 100 ma drain current (pulse) note1 i d(pulse) 200 ma total power dissipation (t a = 25c) p t 150 mw channel temperature t ch 150 c operating temperature t opt ? 55 to +80 c storage temperature t stg ? 55 to +150 c note1. pw 10 ms, duty cycle 50% remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. equivalent circuit source internal diode gate protection diode gate drain
data sheet d13555ej4v0ds 2 2sk1580 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1.0 a gate leakage current i gss v gs = 3.0 v, v ds = 0 v 5.0 na gate cut-off voltage v gs(off) v ds = 3 v, i d = 10 a 0.8 1.1 1.6 v forward transfer admittance | y fs | v ds = 3 v, i d = 10 ma 20 44 ms r ds(on)1 v gs = 2.5 v, i d = 1 ma 9 15 ? drain to source on-state resistance r ds(on)2 v gs = 4.0 v, i d = 1 ma 6 10 ? input capacitance c iss 18 pf output capacitance c oss 22 pf reverse transfer capacitance c rss v ds = 3 v v gs = 0 v f = 1 mhz 4pf turn-on delay time t d(on) 27 ns rise time t r 75 ns turn-off delay time t d(off) 78 ns fall time t f v dd = 3 v, i d = 10 ma v gs = 3 v r g = 10 ? r l = 300 ? 80 ns test circuit switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs 10% 90% v gs 10% 0 i d 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off
data sheet d13555ej4v0ds 3 2sk1580 typical characteristics (t a = 25c) 20 60 80 40 0 100 derating factor of forward bias safe operating area dt - derating factor - % t c - case temperature - ?c 0 20 40 60 80 100 120 140 160 120 total power dissipation vs. ambient temperature p t - total power dissipation -m w t a - ambient temperature - ? c 30 30 60 90 120 150 180 0 150 120 60 180 90 20 60 80 40 0 100 120 drain current vs. drain to source voltage i d - drain current - ma v ds - drain to source voltage - v 01237 pulsed 3.5 v 4.0 v 3.0 v 2.5 v v gs = 2.0 v transfer characteristics i d - drain current - ma v ds = 3 v pulsed t a = 150?c 75?c 25?c ?5?c t a = 150?c 75?c 25?c ?5?c 0 0.5 1.0 1.5 2.0 2.5 3.0 1 10 100 0.1 0.01 v gs - gate to source voltage - v gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ? c v gs(off) - gate to source cut-off voltage - v v ds = 3 v i d = 10 a ? 30 0 30 60 90 120 150 0 0.5 1.5 1.0 100 30 10 3 1 300 v ds = 3 v pulsed 1000 i d - drain current - ma | y fs | - forward transfer admittance - ms t a = ? 25 ? c 1000 100 10 1 75 ? c 25 ? c 150 ? c drain current forward transfer admmittance vs.
data sheet d13555ej4v0ds 4 2sk1580 0 drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - ? v gs - gate to source voltage - v 0 5 10 15 20 25 10 5 i d = 1 ma pulsed drain to source on-state resistance vs. drain current 10 1 100 i d - drain current - ma r ds(on) - drain to source on-state resistance - ? 0 t a = 150 ? c 75 ? c ? 25 ? c 25 ? c v gs = 2.5 v pulsed 330 5 15 10 r ds(on) - drain to source on-state resistance - ? t ch - channel temperature - ? c 30 0 30 150 120 60 90 15 10 5 0 drain to source on-state resistance vs. channel temperature v gs = 2.5 v v gs = 4 v i d = 1 ma pulsed capacitance vs. drain to source voltage 30 100 c iss ,c oss ,c rss - capacitance - pf 1310 0.3 0.1 v ds - drain to source voltage - v 0.1 100 10 1 c iss c oss c rss v gs = 0 v f = 1 mh z 2 10 20 100 200 i d - drain current - ma t d(on) ,t r ,t d(off) ,t f - switchig time - ns t d(off) t d(on) t f t r switching characteristics 1000 300 100 30 10 v dd = 3 v v gs = 3 v r g = 10 ?
data sheet d13555ej4v0ds 5 2sk1580 [memo]
data sheet d13555ej4v0ds 6 2sk1580 [memo]
data sheet d13555ej4v0ds 7 2sk1580 [memo]
2sk1580 m8e 00. 4 the information in this document is current as of june, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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